PHOTOLUMINESCENCE OF GA2S3 AND GA2S3-MN SINGLE-CRYSTALS

Photoluminescence spectra of Ga2S3 and Ga2S3 :Mn single crystals prepa red by the chemical transport reaction method were investigated. We ob served a relatively narrow band at 2.14 eV (514 nm) and a broad band c entered at 1.81 eV (685 nm) for Ga2S3 at 10 K. For Ga2S3 :Mn, on the o ther hand, a dominant emission band at 1.81 eV (685 nm) and three weak emission bands at 2.34(530), 2.14 (579) and 1.54eV (805 nm) are obser ved. The origins of the emission bands are identified on the basis of the energy-band scheme proposed from the measurements of optical absor ption, TSC and PICTS. The results show that two emission bands for Ga2 S3 are attributed to the electron transition from the donor level to t he acceptor levels, and four emission bands for Ga2S3:Mn are associate d with the transitions from the excited state(4)T(1)((4)G) of Mn2+ to the ground state (6)A(1)(S-6) and the acceptor levels.