TIME-RESOLVED PHOTOLUMINESCENCE MEASUREMENTS OF INGAAS INP MULTIPLE-QUANTUM-WELL STRUCTURES AT 1.3-MU-M WAVELENGTHS BY USE OF GERMANIUM SINGLE-PHOTON AVALANCHE PHOTODIODES/

Authors
BULLER GS FANCEY SJ MASSA JS WALKER AC COVA S LACAITA A
Citation
Gs. Buller et al., TIME-RESOLVED PHOTOLUMINESCENCE MEASUREMENTS OF INGAAS INP MULTIPLE-QUANTUM-WELL STRUCTURES AT 1.3-MU-M WAVELENGTHS BY USE OF GERMANIUM SINGLE-PHOTON AVALANCHE PHOTODIODES/, Applied optics, 35(6), 1996, pp. 916-921
Citations number
25
Categorie Soggetti
Optics
Journal title
Applied optics → ACNP
ISSN journal
00036935
Volume
35
Issue
6
Year of publication
1996
Pages
916 - 921
Database
ISI
SICI code
0003-6935(1996)35:6<916:TPMOII>2.0.ZU;2-M
Abstract
A commercially available germanium avalanche photodiode operating in t he single-photon-counting mode has been used to perform time-resolved photoluminescence measurements on InGaAs/InP multiple-quantum-well str uctures. Photoluminescence in the spectral region of 1.3-1.48 mu m was detected with picosecond timing accuracy by use of the time-correlate d single-photon counting technique. The carrier dynamics were monitore d for excess photogenerated carrier densities in the range 10(18)-10(1 5) cm(-3). The recombination time is compared for similar InGaAs-based quantum-well structures grown by use of different epitaxial processes . (C) 1996 Optical Society of America