PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF ORGANOSILICON MATERIALS - A COMPARISON OF HEXAMETHYLDISILANE AND TETRAMETHYLSILANE PRECURSORS

Authors
FONSECA JLC TASKER S APPERLEY DC BADYAL JPS
Citation
Jlc. Fonseca et al., PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF ORGANOSILICON MATERIALS - A COMPARISON OF HEXAMETHYLDISILANE AND TETRAMETHYLSILANE PRECURSORS, Macromolecules, 29(5), 1996, pp. 1705-1710
Citations number
57
Categorie Soggetti
Polymer Sciences
Journal title
Macromolecules → ACNP
ISSN journal
00249297
Volume
29
Issue
5
Year of publication
1996
Pages
1705 - 1710
Database
ISI
SICI code
0024-9297(1996)29:5<1705:PCOOM->2.0.ZU;2-O
Abstract
Plasma polymerization of hexamethyldisilane ([CH3]3SiSi[CH3](3)) and t etramethylsilane ([CH3]Si-4) has been investigated by XPS, FTIR, solid state NMR, and plasma emission diagnostics. Thin carbosilane films an d powders can be deposited by this method. Hexamethyldisilane is found to undergo glow discharge polymerization much more readily than tetra methylsilane; this has been attributed to the chromophoric ''Si-Si'' b ond contained in the former precursor.