AUTOMATED IMAGING OF SEMICONDUCTOR CRYSTAL-MELT INTERFACE ZONE

In semiconductor manufacturing processes, the shape and position of th e solid-liquid transition interface significantly affects the material properties. A prototype of a real-time imaging instrument has been de veloped to monitor and control the interface shape and location utiliz ing computed tomography methods. This device is promising for controll ing growth of semiconductors and other materials. The instrument uses a high sensitivity, solid state CdTe gamma-ray detector and a Cs-137 s ource. The prototype has demonstrated density contrast resolution of < 3% and spatial resolution of <500 mum.