LOW-TEMPERATURE MOBILITY OF A 2-DIMENSIONAL HOLE GAS IN GAAS ALGAAS HETEROJUNCTIONS

A theoretical model for the calculation of the mobility of a two-dimen sional hole gas (2DHG) supported by a heterojunction is presented. Dif ferent scattering mechanisms that put a limit to the inherent mobility of the 2DHG system, like the background impurity scattering, remote i mpurity scattering, deformation potential, and piezoelectric acoustic phonon scattering, and polar optical phonon scattering, have been incl uded. Dynamic screening of the hole gas has been derived. Screening pl ays a very important role in the scattering of the heavier hole gas th an for the lighter electrons. A discrepancy between the experimental a nd the theoretical effective hole masses existing in earlier theoretic al models has been overcome in the present communication.