WETTING KINETICS AND BONDING OF AL AND AL-ALLOYS ON ALPHA-SIC

Authors
LAURENT V RADO C EUSTATHOPOULOS N
Citation
V. Laurent et al., WETTING KINETICS AND BONDING OF AL AND AL-ALLOYS ON ALPHA-SIC, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 205(1-2), 1996, pp. 1-8
Citations number
33
Categorie Soggetti
Material Science
Journal title
Materials science & engineering. A, Structural materials: properties, microstructure and processing → ACNP
ISSN journal
09215093
Volume
205
Issue
1-2
Year of publication
1996
Pages
1 - 8
Database
ISI
SICI code
0921-5093(1996)205:1-2<1:WKABOA>2.0.ZU;2-8
Abstract
The wetting behaviour of aluminium on basal planes of alpha-SiC single crystals was investigated between 1000 and 1200 K by the sessiIe drop technique in high vacuum. The experiments were focused on wetting kin etics to determine the mechanisms controlling the rate of spreading an d to identify all the characteristic contact angles formed during an i sothermal experiment. Pure Al and Al alloys with silicon, copper and t in were studied. In some experiments SIC substrates covered by a silic a layer 10-50 nm thick were used.