ELECTRONIC TRANSPORT-PROPERTIES OF AMORPHOUS TI-NI AND HF-NI ALLOYS

Measurements of electrical resistivity rho and the Hall coefficient R( H) of codeposited amorphous Ti1-xNx films from 1.7 K to 300 K over the composition range 0.08 < x < 0.72 along with measurements of the Hall coefficient for four compositions of melt-spun amorphous Hf1-xNix rib bons are reported. RH changes sign from positive to negative as the Ni concentration is increased and has a weak temperature dependence. The Hall resistivity of Ni-rich alloys indicates a ferromagnetic transiti on. For Ni-based amorphous alloys, the critical concentration of Ni at which the Hall coefficient changes sign from positive to negative doe s not vary appreciably for ETM components of the same column. The room -temperature resistivity ranges from 190 to 300 muOMEGA cm and shows a small temperature dependence with a negative TCR, which is typical of amorphous alloys. R(H) - R(H)0 (the Lorentz contribution) shows an al most universal scaling with rho2 as a function of Ni composition x for M (Hf, Zr, Ti)-Ni alloys.