Nonequilibrium photoexcited carrier dynamics in InP:Cu was investigate
d by two experimental techniques: the time-resolved photoluminescence
up-conversion and tile transient photoconductivity measurement. Both m
easurements show that doping with copper significantly modifies tile p
hotoexcited carrier relaxation in indium phosphide. There are several
strong indications that this effect originates from the carrier trappi
ng at metallic precipitates.