PHOTOREFLECTANCE MEASUREMENTS OF INGAAS GAAS QUANTUM-WELLS/

Authors
TOMASZEWICZ T KORONA KP BOZEK R BARANOWSKI JM
Citation
T. Tomaszewicz et al., PHOTOREFLECTANCE MEASUREMENTS OF INGAAS GAAS QUANTUM-WELLS/, Acta Physica Polonica. A, 90(5), 1996, pp. 965-968
Citations number
3
Categorie Soggetti
Physics
Journal title
Acta Physica Polonica. A → ACNP
ISSN journal
05874246
Volume
90
Issue
5
Year of publication
1996
Pages
965 - 968
Database
ISI
SICI code
0587-4246(1996)90:5<965:PMOIGQ>2.0.ZU;2-E
Abstract
Samples with InGaAs/GaAs quantum wells were grown by metallo-organic c hemical vapour deposition in order to detect and analyze GaSb islands deposited on the surface. Results of photoreflectance measurements of quantum wells are reported. The correspondence between broadening of q uantum well transition lines and GaSb structures has been observed.