ACOUSTIC-PHONON ACTIVATED AND ASSISTED TUNNELING IN GE-SB,P

Authors
ZURAUSKIENE N DARGYS A
Citation
N. Zurauskiene et A. Dargys, ACOUSTIC-PHONON ACTIVATED AND ASSISTED TUNNELING IN GE-SB,P, Acta Physica Polonica. A, 90(5), 1996, pp. 993-996
Citations number
9
Categorie Soggetti
Physics
Journal title
Acta Physica Polonica. A → ACNP
ISSN journal
05874246
Volume
90
Issue
5
Year of publication
1996
Pages
993 - 996
Database
ISI
SICI code
0587-4246(1996)90:5<993:AAAATI>2.0.ZU;2-X
Abstract
The influence of lattice vibrations on the field ionization rate of sh allow donors in germanium at low lattice temperatures is investigated experimentally and theoretically. The role played by acoustic phonons in the tunnelling of electrons from the ground donor level (phonon ass isted tunnelling) and through the excited donor levels (phonon activat ed tunnelling) is considered. Both processes are shown to enhance tile tunnelling rate.