INITIAL ROUGHNESS AND RELAXATION BEHAVIOR OF MBE GROWN ZNSE GAAS/

Citation
B. Buda et al., INITIAL ROUGHNESS AND RELAXATION BEHAVIOR OF MBE GROWN ZNSE GAAS/, Acta Physica Polonica. A, 90(5), 1996, pp. 997-1001
Citations number
6
Categorie Soggetti
Physics
Journal title
ISSN journal
05874246
Volume
90
Issue
5
Year of publication
1996
Pages
997 - 1001
Database
ISI
SICI code
0587-4246(1996)90:5<997:IRARBO>2.0.ZU;2-U
Abstract
We investigated the GaAs/ZnSe interface and the influence of the Ga2Se 3 formation at the GaAs/ZnSe interface on the relaxation of the ZnSe e pilayer using reflection high-energy electron diffraction, atomic forc e microscope, photoluminescence, and X-ray diffraction techniques. An improvement of the surface roughness due to the cleaning of the GaAs s ubstrate with hydrogen excited in a plasma source and a higher critica l thickness of GaAs(001)/ZnSe due to the suppression of Ga2Se3 at the surface was observed.