1-GB S 2-BEAM TRANSIMPEDANCE SMART-PIXEL OPTICAL RECEIVERS MADE FROM HYBRID GAAS MQW MODULATORS BONDED TO 0.8-MU-M SILICON CMOS/

Citation
Tk. Woodward et al., 1-GB S 2-BEAM TRANSIMPEDANCE SMART-PIXEL OPTICAL RECEIVERS MADE FROM HYBRID GAAS MQW MODULATORS BONDED TO 0.8-MU-M SILICON CMOS/, IEEE photonics technology letters, 8(3), 1996, pp. 422-424
Citations number
7
Categorie Soggetti
Optics,"Physics, Applied
ISSN journal
10411135
Volume
8
Issue
3
Year of publication
1996
Pages
422 - 424
Database
ISI
SICI code
1041-1135(1996)8:3<422:1S2TSO>2.0.ZU;2-K
Abstract
We have made two-beam smart-pixel optical receivers using a hybrid att achment of GaAs-AlGaAs multiple-quantum-well (MQW) pin devices to foun dry-fabricated 0.8-mu m linewidth CMOS circuits. Results from a repeat er in which receiver output is coupled to a transmitter circuit drivin g a differential pair of MQW modulators are reported. When tested with high-contrast, directly-modulated laser diodes, an optical energy of 26 fJ (-21.5 dBm) in each beam is required to obtain a bit error rate of 1 x 10(-9) at 622 Mb/s, and operation at this error rate is observe d to 1 Gb/s. The described receiver (one of several we have made) has three amplification stages, with the first being of the transimpedance type. The reported receiver fits easily within a 45 x 25 mu m area, a nd the entire repeater circuit draws about 2 mA from a 5-V power suppl y, with the transmitter accounting for about 20 percent of the total.