RAMAN ANALYSIS OF ZN1-XMGXSE LAYERS GROWN ON GAAS AND ZNTE SUBSTRATES

Authors
RENUCCI MA FRANDON J GLOWACKI G GAPINSKI A ROZPLOCH F BALA W
Citation
Ma. Renucci et al., RAMAN ANALYSIS OF ZN1-XMGXSE LAYERS GROWN ON GAAS AND ZNTE SUBSTRATES, Acta Physica Polonica. A, 90(5), 1996, pp. 1065-1069
Citations number
9
Categorie Soggetti
Physics
Journal title
Acta Physica Polonica. A → ACNP
ISSN journal
05874246
Volume
90
Issue
5
Year of publication
1996
Pages
1065 - 1069
Database
ISI
SICI code
0587-4246(1996)90:5<1065:RAOZLG>2.0.ZU;2-F
Abstract
A study of the Raman scattering in Zn1-xMgxSe (0 less than or equal to x less than or equal to 0.4) epilayers grown by molecular beam epitax y on (100) GaAs and (111)(Zn) ZnTe substrates has been performed. Two kinds of longitudinal optical phonon modes (LO(Zn-Se) and LO(Mg-Se)) w ere observed under excitation of the Ar+ and Kr+ laser lines at room t emperature, whose frequencies and intensities depend characteristicall y on the Mg content.