OPTICAL-PROPERTIES OF ALXGA1-XASYSB1-Y EPITAXIAL LAYERS

Authors
SWIATEK K PISKORSKI M PIOTROWSKI TT
Citation
K. Swiatek et al., OPTICAL-PROPERTIES OF ALXGA1-XASYSB1-Y EPITAXIAL LAYERS, Acta Physica Polonica. A, 90(5), 1996, pp. 1100-1102
Citations number
5
Categorie Soggetti
Physics
Journal title
Acta Physica Polonica. A → ACNP
ISSN journal
05874246
Volume
90
Issue
5
Year of publication
1996
Pages
1100 - 1102
Database
ISI
SICI code
0587-4246(1996)90:5<1100:OOAEL>2.0.ZU;2-Q
Abstract
Photoluminescence spectra of AlxGa1-xAsySb1-y layers (x = 0.2-0.5, y = 0.02-0.03) grown by liquid-phase epitaxy on GaSb substrates were stud ied in a wide temperature range (14-295 K). The temperature changes of energy and intensity of the layer and substrate emission were measure d. Linear part of the temperature-induced energy shift of the Al0.20Ga 0.80As0.02Sb0.98 band-to-band emission exhibits a slope of -0.3 meV/K and -0.45 meV/K at temperatures 150 K and 295 K, respectively.