Optical anisotropy has been evaluated in terms of polarization depende
nce of photoluminescence (PL) and PL excitation (PLE) spectra for 5-nm
-scale GaAs/AlAs T-shaped quantum wires (T-QWR's). They were prepared
by the cleaved-edge overgrowth method, and their potential profile was
previously characterized by spatially resolved PL measurements. The P
L and PLE signals for T-QWR's showed stronger polarization along the T
-QWR's. Comparing T-QWR's with a reference QW grown on a (110) surface
, we clarified the optical anisotropy induced purely by the lateral co
nfinement in T-QWR's.