LATERAL CORRELATION IN MESOSCOPIC STRUCTURES ON THE SILICON(001) SURFACE DETERMINED BY GRATING X-RAY DIFFUSE-SCATTERING

Authors
SHEN Q UMBACH CC WESELAK B BLAKELY JM
Citation
Q. Shen et al., LATERAL CORRELATION IN MESOSCOPIC STRUCTURES ON THE SILICON(001) SURFACE DETERMINED BY GRATING X-RAY DIFFUSE-SCATTERING, Physical review. B, Condensed matter, 53(8), 1996, pp. 4237-4240
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
53
Issue
8
Year of publication
1996
Pages
4237 - 4240
Database
ISI
SICI code
0163-1829(1996)53:8<4237:LCIMSO>2.0.ZU;2-3
Abstract
High-resolution x-ray-diffraction study from a mesoscopic scale gratin g surface of Si (001) reveals a diffuse-scattering peak superimposed o n each grating superlattice peak. It is shown that the diffuse scatter ing arises from a correlated size imhomogeneity produced during the ox idation and fabrication processes. A simple two-level model is present ed to explain the experimental data. It provides a quantitative way to characterize the imperfections in a large array of mesoscopic structu res.