SELECTIVE LASER REMOVAL OF THE DIMER LAYER FROM SI(100) SURFACES REVEALED BY SCANNING-TUNNELING-MICROSCOPY

Authors
XU J OVERBURY SH WENDELKEN JF
Citation
J. Xu et al., SELECTIVE LASER REMOVAL OF THE DIMER LAYER FROM SI(100) SURFACES REVEALED BY SCANNING-TUNNELING-MICROSCOPY, Physical review. B, Condensed matter, 53(8), 1996, pp. 4245-4248
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
53
Issue
8
Year of publication
1996
Pages
4245 - 4248
Database
ISI
SICI code
0163-1829(1996)53:8<4245:SLROTD>2.0.ZU;2-M
Abstract
Scanning tunneling microscopy (STM) of laser-irradiated Si(100) surfac es shows that the dimerized outermost layer can be selectively removed by a pulsed Nd:YAG laser with a fluence below the melt threshold. The atoms in the laser-uncovered second layer are close to positions of a bulk terminated (1 x 1) structure, but with a slight pairing, while d imers retain a (2 x 1) configuration in the first layer. The pairing d istance and fraction of the remaining dimers decrease with increasing laser exposures. The laser-uncovered layer also remains free of vacanc ies.