III-V DILUTED MAGNETIC SEMICONDUCTOR - SUBSTITUTIONAL DOPING OF MN ININAS

Local structures around Mn in In1-xMnxAs films grown by molecular-beam epitaxy have been studied by using Mn K-edge extended x-ray-absorptio n fine-structure (EXAFS) technique. Substitution of Mn atoms for the I n sites is found in samples either grown at low substrate temperatures (near 200 degrees C) or with a low Mn concentration (about 1 at. %). This result represents a significant extension of an earlier EXAFS stu dy and serves as direct experimental evidence for III-V diluted magnet ic semiconductors obtained by substitutional doping Of Mn impurities i n InAs.