EFFECT OF HIGH-TEMPERATURE ANNEALING ON THE ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF PHOSPHORUS-DOPED A-SI-H FILMS

Authors
KUROVA IA MELESHKO NV LARINA EV KHLEBNIKOVA OP GROMADIN AL
Citation
Ia. Kurova et al., EFFECT OF HIGH-TEMPERATURE ANNEALING ON THE ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF PHOSPHORUS-DOPED A-SI-H FILMS, Semiconductors, 30(1), 1996, pp. 6-8
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
30
Issue
1
Year of publication
1996
Pages
6 - 8
Database
ISI
SICI code
1063-7826(1996)30:1<6:EOHAOT>2.0.ZU;2-Q
Abstract
The effect of high-temperature annealing on the conductivity sigma(d) and the photoconductivity sigma(ph) of phosphorus-doped amorphous sili con a-Si:H films is investigated. It is shown that an increase of sigm a(d) and sigma(ph), as was observed in boron-doped films as a result o f an increain the concentration of electrically active B impurity atom s, is not observed in the films after annealing them at temperatures T -a < 450 degrees C. A possible explanation is given for the different effect of annealing on films doped with a donor and an acceptor impuri ty. (C) 1996 American Institute of Physics.