LOW-TEMPERATURE PHOTOELECTRIC CHARACTERISTICS OF MNXHG1-XTE

The spectral, temperature, and field dependences of the photoconductiv ity and photoelectromagnetic effect in n- and p-type MnxHg1-xTe crysta ls were measured. Peculiarities of the photoelectric characteristics w ere found at low temperatures (T < 30-40 K): attachment of the minorit y current carriers and heating of the electons by radiation in n-type material and the effect of freeze-out of the majority current carriers on the photoconductivity lifetime in p-type material. The parameters of the current carriers and the main recombination mechanisms are dete rmined. (C) 1996 American Institute of Physics.