RADIATIVE RECOMBINATION IN THE NARROW-BAND GAP SOLID-SOLUTIONS N-HG1-XCDXSE

Radiative recombination in n-Hg1-xCdxSe (0.2 less than or equal to x l ess than or equal to 0.32) in the temperature range 4.2-77 K and in ma gnetic fields up to 8 T was investigated. The concentration N-d-N-A Of uncontrollable impurities was equal to (2-6) x 10(16) cm(-3). The pho toluminescence spectra of n-Hg1-xCdxSe at 4.2 K in the absence of a ma gnetic field have a three-band structure. The observed emission bands were identified on the basis of integrated photoluminescence and photo electric investigations and the effects of the temperature and a magne tic field: The short-wavelength A band is due to excitons bound on don or impurities, the B band is due to an exciton bound on composition fl uctuations, and the long-wavelength C band is due to donor-acceptor re combination. The energy position of the donor was at 1.9 meV and the a cceptor states were at 90 and 8 meV. (C) 1996 American Institute of Ph ysics.