THEORY FOR PASSIVE MODE-LOCKING IN SEMICONDUCTOR-LASER STRUCTURES INCLUDING THE EFFECTS OF SELF-PHASE MODULATION, DISPERSION, AND PULSE COLLISIONS

Citation
Rgmp. Koumans et R. Vanroijen, THEORY FOR PASSIVE MODE-LOCKING IN SEMICONDUCTOR-LASER STRUCTURES INCLUDING THE EFFECTS OF SELF-PHASE MODULATION, DISPERSION, AND PULSE COLLISIONS, IEEE journal of quantum electronics, 32(3), 1996, pp. 478-492
Citations number
33
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189197
Volume
32
Issue
3
Year of publication
1996
Pages
478 - 492
Database
ISI
SICI code
0018-9197(1996)32:3<478:TFPMIS>2.0.ZU;2-G
Abstract
We present a theory for passive mode-locking in semiconductor laser st ructures using a semiconductor laser amplifier and absorber, The mode- locking system is described in terms of the different elements in the semiconductor laser structure, We derive mode-locking conditions and s how how other mode-locking parameters, like pulse width and pulse ener gy, are determined by the mode-locking system. System parameters, like bandwidth, dispersion, and self-phase modulation are shown to play an important role in mode-locking conditions and results, We also discus s the effects of pulse collisions and positions of the mode-locking el ements inside the cavity on mode-locking stability and show that these effects can be easily included in the presented model. Finally, we gi ve a number of design rules and recommendations for fabricating passiv ely mode-locked lasers.