SILICON TUBES FOR MICROELECTRONIC APPLICATIONS GROWN DIRECTLY FROM THE MELT

Citation
V. Vanca et al., SILICON TUBES FOR MICROELECTRONIC APPLICATIONS GROWN DIRECTLY FROM THE MELT, Crystal research and technology, 31(7), 1996, pp. 837-842
Citations number
5
Categorie Soggetti
Crystallography
ISSN journal
02321300
Volume
31
Issue
7
Year of publication
1996
Pages
837 - 842
Database
ISI
SICI code
0232-1300(1996)31:7<837:STFMAG>2.0.ZU;2-R
Abstract
A die-free technique for growing large diameter silicon tubes (5-15 cm ) directly from the melt has been developed. Tile attained result was a constant tube wall thickness for a range of 7 to 0.2 mm at 1500 mm l ength limited by the equipment pulling stroke. It is shown that the in ner pressure of tile tube is function of tile meniscus height at tile growth interface. A speed is also presented. By means of experiments t hf thermal gradient at tile solid-liquid interfaces is determined.