MOSSBAUER STUDY OF FE MAGNETIC STATE AT THE INTERFACE BETWEEN FE-AL-SI THIN-FILMS AND CRYSTALLIZED GLASS SUBSTRATE

Citation
T. Komatsu et al., MOSSBAUER STUDY OF FE MAGNETIC STATE AT THE INTERFACE BETWEEN FE-AL-SI THIN-FILMS AND CRYSTALLIZED GLASS SUBSTRATE, Journal of materials science. Materials in electronics, 7(2), 1996, pp. 101-106
Citations number
19
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
09574522
Volume
7
Issue
2
Year of publication
1996
Pages
101 - 106
Database
ISI
SICI code
0957-4522(1996)7:2<101:MSOFMS>2.0.ZU;2-5
Abstract
The magnetic state of Fe atoms at or near the interface between Fe74.3 Al9.8Si15.9 sendust magnetic thin films and SiO2-based crystallized gl ass substrate (Fotoceram, Corning Co.) has been examined using convers ion electron Mossbauer spectroscopy. The thicknesses of sputtered film s are 0.05-2.0 mu m, and annealing conditions are at 500 degrees C for 1 h. The excellent soft magnetic properties are not obtained for film s with a thickness of less than 0.5 mu m. The presence of ferromagneti c Fe atoms with internal magnetic fields of 24.3-24.9 MA m(-1) is conf irmed at or near the interface, indicating the formation of an Fe-rich phase such as Fe90Si10. The fraction of Fe atoms forming the Fe-rich phase at or near the interface is estimated to be around 20%. The form ation of the Fe-rich phase is one of the main reasons for the degradat ion of the soft magnetic properties of sendust films deposited on SiO2 -based crystallized glass substrate, even though the DO3-type ordered structure has also been formed.