T. Komatsu et al., MOSSBAUER STUDY OF FE MAGNETIC STATE AT THE INTERFACE BETWEEN FE-AL-SI THIN-FILMS AND CRYSTALLIZED GLASS SUBSTRATE, Journal of materials science. Materials in electronics, 7(2), 1996, pp. 101-106
The magnetic state of Fe atoms at or near the interface between Fe74.3
Al9.8Si15.9 sendust magnetic thin films and SiO2-based crystallized gl
ass substrate (Fotoceram, Corning Co.) has been examined using convers
ion electron Mossbauer spectroscopy. The thicknesses of sputtered film
s are 0.05-2.0 mu m, and annealing conditions are at 500 degrees C for
1 h. The excellent soft magnetic properties are not obtained for film
s with a thickness of less than 0.5 mu m. The presence of ferromagneti
c Fe atoms with internal magnetic fields of 24.3-24.9 MA m(-1) is conf
irmed at or near the interface, indicating the formation of an Fe-rich
phase such as Fe90Si10. The fraction of Fe atoms forming the Fe-rich
phase at or near the interface is estimated to be around 20%. The form
ation of the Fe-rich phase is one of the main reasons for the degradat
ion of the soft magnetic properties of sendust films deposited on SiO2
-based crystallized glass substrate, even though the DO3-type ordered
structure has also been formed.