STUDIES ON THE CONCENTRATION PROFILES AND GROWTH-RATE OF GAP BY LIQUID-PHASE EPITAXY

The concentration profiles of phosphorus at successive equally spaced layers in front of a GaP crystal growing under normal conditions of li quid phase epitaxy (LPE) have been simulated using the appropriate bou ndary conditions and hence the growth rate of GaP has been calculated. The concentration gradient at the interface has been used to calculat e the growth rate and hence the amount etched or grown as a function o f time has been investigated. Our theoretical predictions have been co mpared with the reported experimental values and the results are discu ssed in detail.