SHORT-RANGE ORDERED STRUCTURE OF GA0.47IN0.53AS STUDIED BY ENERGY-FILTERED ELECTRON-DIFFRACTION AND HREM

An ordered structure of a III-V alloy semiconductor Ga0.47In0.53As was investigated by electron diffraction and high-resolution electron mic roscopy (HREM). In order to investigate detailed intensity distributio ns of diffuse scattering in electron diffraction patterns, an omega-ty pe energy filter and a cold stage were used, It is shown that the back ground, which arises from plasmon scattering and thermal diffuse scatt ering is drastically reduced, acid the detailed shape and intensity di stribution of the diffuse scattering have been revealed, By processing an HREM image, the short-range ordered structure, which is considered to result from the ordering of Ga and In, was dearly revealed, A comp arison of the intensity distribution of the diffuse scattering in Al(0 .48)In(0.52)AS With that in Ga0.47In0.53As is briefly discussed, and a simple structure model is derived from the HREM image.