TRANSPORT-PROPERTIES OF TLINSE2 SINGLE-CRYSTALS

Single crystals of TlInSe2 were prepared by a special modified Bridgma n technique. The influence of temperature on the electrical conductivi ty, Hall effect, Hall mobility, and the carrier concentration was inve stigated in the temperature range 190-625 K. The energy gap of conduct ion was calculated. The scattering mechanism of the charge carrier was discussed in the same temperature range Beside this, the thermoelectr ic power was measured in a temperature range extending from 190 up to 485 K.