Ck. Kim et Lw. Hobbs, MICROSTRUCTURAL EVIDENCE FOR SHORT-CIRCUIT OXYGEN DIFFUSION PATHS IN THE OXIDATION OF A DILUTE NI-CR ALLOY, Oxidation of metals, 45(3-4), 1996, pp. 247-265
A comparative study of high-temperature oxidation of Ni containing I a
t.% Cr and pure Ni was carried out. Instead of the conventional kineti
cs study using thermogravimetry, a microlithographic marker experiment
was designed. Observation of the markers using cross-sectional TEM an
d SEM has revealed striking differences in the scale morphology, micro
structures, and oxidation mechanisms between pure Ni and the Cr-doped
Ni substrates. In particular, the results suggest that a small additio
n of Cr promotes significant inward transport of oxygen. Marker experi
ments revealed that NiO grown on pure Ni is wholly attributable to out
ward-cation diffusion. In contrast, NiO grown on Ni-1 at.% Cr exhibite
d formation of a substantial inner layer having a submicron grain size
, established by the markers lo have formed from oxygen ingress. For p
ure Ni, voids were observed to be distributed only within oxide grains
. In contrast, for Ni containing 1 at.% Cr, elongated pores formed ext
ensively along oxide-grain boundaries. Formation of new fine-grain oxi
de in these pores was observed to have sometimes completely resealed t
he void. It is, therefore, proposed that the transport of oxygen in th
e case of oxide scale grown on Ni-1 at.% Cr occurs via voids (pores) f
ormed by vacancy coalescence at the grain boundaries.