Yc. Chung et Bj. Wuensch, GROWTH OF NICKEL-OXIDE SINGLE-CRYSTALS AND BICRYSTALS VIA CHEMICAL-VAPOR TRANSPORT, Journal of the American Ceramic Society, 79(3), 1996, pp. 695-699
A chemical vapor transport (CVT) method was successfully used to grow
NiO single crystals and bicrystals heteroepitaxially on single-crystal
MgO substrates. The most favorable growth conditions were obtained at
1400 K using 250 torr (similar to 3.33 x 10(4) Pa) of HCl(g) as the t
ransport agent, Average growth rates greater than 100 mu m/h were easi
ly achieved under these conditions. The CVT-grown NiO single crystals
and bicrystals usually displayed highly reflective facets along the gr
owth direction that suggest high mechanical quality. The grain boundar
ies in the bicrystals were observed to be perpendicular to the (001) g
rowth surface. The epitaxial NiO crystals were easily separated from t
he MgO substrate by dissolving away the latter in 85% H3PO4 at 190 deg
rees C. The crystallinity and purity of the deposits were checked usin
g these free-standing NiO crystals. The concentration of cation impuri
ties and the Cl content in the CVT-grown crystals were investigated by
inductively coupled plasma (ICP) mass-spectrometric analysis and neut
ron activation analysis, respectively. High-resolution transmission el
ectron microscopy of a Sigma 13 (510) boundary revealed a structure at
the atomic scale that provided no evidence for segregated phases.