EFFECT OF A LOW CHROMIUM IMPURITY ON PROPERTIES OF PHOTOINDUCED CHARGE-CARRIERS IN BI12TIO20 AND BI12SIO20 SINGLE-CRYSTALS

Authors
MOKRUSHINA EV NECHITAILOV AA PROKOFIEV VV
Citation
Ev. Mokrushina et al., EFFECT OF A LOW CHROMIUM IMPURITY ON PROPERTIES OF PHOTOINDUCED CHARGE-CARRIERS IN BI12TIO20 AND BI12SIO20 SINGLE-CRYSTALS, Optics communications, 123(4-6), 1996, pp. 592-596
Citations number
8
Categorie Soggetti
Optics
Journal title
Optics communications → ACNP
ISSN journal
00304018
Volume
123
Issue
4-6
Year of publication
1996
Pages
592 - 596
Database
ISI
SICI code
0030-4018(1996)123:4-6<592:EOALCI>2.0.ZU;2-4
Abstract
The influence of low (similar to 10(-4) wt.%) chromium concentrations on the photorefractive properties of sillenite crystals have been stud ied by holographic techniques. The presence of chromium decreases the diffusion length of photoexcited carriers in both Bi12SiO20 and Bi12Ti O20 crystals, whereas the Debye screening length decreases only in BSO samples. This means that the chromium present in BTO crystals does no t increase the number of the free traps. Small concentrations of chrom ium in BSO crystal displace the maximum of the gain factor to higher s patial frequencies that could be useful for some applications.