LOW-ENERGY LASER PHOTOELECTRON STUDY OF DEFECT STATES ON CLEAVED SI(111)2X1 SURFACES

Authors
YAMADA M KANASAKI J ITOH N WILLIAMS RT
Citation
M. Yamada et al., LOW-ENERGY LASER PHOTOELECTRON STUDY OF DEFECT STATES ON CLEAVED SI(111)2X1 SURFACES, Surface science, 349(1), 1996, pp. 107-110
Citations number
9
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
349
Issue
1
Year of publication
1996
Pages
107 - 110
Database
ISI
SICI code
0039-6028(1996)349:1<107:LLPSOD>2.0.ZU;2-G
Abstract
Step-associated surface defect states on good cleaved surfaces of Si(1 11)2 x 1 have been sensitively observed without a background of valenc e-band or intrinsic surface-state photoelectrons, by exciting with tun able laser photons below the valence photoemission threshold.