EXISTENCE OF ELECTRONIC EXCITATION-ENHANCED CRYSTALLIZATION IN GESB AMORPHOUS THIN-FILMS UPON ULTRASHORT LASER-PULSE IRRADIATION

Authors
SOLIS J AFONSO CN HYDE SCW BARRY NP FRENCH PMW
Citation
J. Solis et al., EXISTENCE OF ELECTRONIC EXCITATION-ENHANCED CRYSTALLIZATION IN GESB AMORPHOUS THIN-FILMS UPON ULTRASHORT LASER-PULSE IRRADIATION, Physical review letters, 76(14), 1996, pp. 2519-2522
Citations number
21
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
76
Issue
14
Year of publication
1996
Pages
2519 - 2522
Database
ISI
SICI code
0031-9007(1996)76:14<2519:EOEECI>2.0.ZU;2-U
Abstract
The energy density crystallization threshold of amorphous GeSb films h as been studied for the first time as a function of the laser pulse du ration in the range from 170 fs to 8 ns. The results obtained provide evidence of the existence of enhanced crystallization upon irradiation with pulses shorter than 800 fs, which is most likely related to elec tronic excitation effects.