The dc conduction data on titanium-titanium oxide-vacuum evaporated me
tal (Al, Sn and Sb) systems have been obtained. The effects of field s
trength, temperature, thickness of the oxide and the polalrity of elec
trode on the dc conduction have been studied. Dominant carrier transpo
rt in Ti(+)/TiO2/ metal systems is through Poole-Frenkel conduction me
chanism. In Ti(-)/TiO2/metal systems the current-voltage plots show th
at at lower voltages charge transfer is through ohmic conduction, howe
ver, at higher voltages the slopes of logI-logV plots are in the range
of 3.54-3.86, indicating that the space charge limited conduction (SC
LC) mechanism is operative. Similar gradual transitions from ohmic con
ductivity to SCLC are indicated irrespective of the nature of the meta
l and thickness of the oxide film. For Ti (negative electrode), the ga
p-state density N(E), are calculated using approaches of Micocci et at
[J Appl Phys, 64 (1988) 1885] and Lampert and Mark (1970) for differe
nt metals and oxide thicknesses. The values from the two methods compa
re well for all the systems. N(E) varies approximately inversely with
squared oxide thickness.