ELECTRICAL-RESISTIVITY OF BISMUTH IMPLANTED INTO SILICON

We investigate the electrical properties of Bi-doped Si samples, prepa red by ion implantation, in a range of concentrations around and above the metal-nonmetal transition. Comparison between experimental and th eoretical values of the resistivity brought out that in these samples a similar behavior is observed as for other n-doped Si, thus confirmin g the results obtained in the same range of impurity concentration, i. e., rho(Sb)<rho(P)<rho(As)<rho(Bi). (C) 1996 American Institute of Phy sics.