We present the development of a magnetron sputtering process for the f
abrication of exclusively c-axis oriented LiNbO3 thin films on silicon
substrates. The heterostructure consists of LiNbO3/Si3N4/SiO2/Si. The
deposition of the Si3N4 film is key to obtaining exclusively c-orient
ed LiNbO3 thin films. The deposition conditions for the LiNbO3 are dis
cussed. (C) 1996 American Institute of Physics.