SHALLOW SI PD-BASED OHMIC CONTACTS TO N-AL0.5IN0.5P/

Si/Pd-based contact schemes based on the solid-phase regrowth (SPR) pr ocess have been developed to form low-resistance ohmic contacts to n-A l0.5In0.5P (E(g)=2.3 eV) with a minimum contact resistivity of about 6 X10(-6) Omega cm(2). The SPR process responsible for the ohmic contact formation was verified using cross-sectional transmission electron mi croscopy. The contact resistivity of the Si/Pd-based contacts remained in the range of 2-3x10(-5) Omega cm(2) after aging at 400 degrees C f or 25 h. Furthermore, a lateral modulation disordering phenomenon as a result of the SPR process in the regrown AlInP layer has been observe d. These ohmic contacts may be useful in some novel Al0.5In0.5P-relate d device fabrication schemes. (C) 1996 American Institute of Physics.