HIGH-POWER INGAALP LASER-DIODES FOR HIGH-DENSITY OPTICAL-RECORDING

Theoretical investigation has been carried out for high-power InGaAlP visible-light laser diodes. The thin active layer, essential for preve nting catastrophic optical damage of the laser facet, enhances carrier overflow and causes a deterioration in temperature characteristics. I ncrease in the bandgap energy difference between the active layer and the cladding layer is required in order to maintain sufficient heterob arrier height. High acceptor concentration for a p-cladding layer has a great effect on the prevention of the carrier overflow and, as a res ult, on the improvement of the temperature characteristics. High-power transverse-mode stabilized InGaAlP lasers, operating at high temperat ure, were realized by employing a composition-shifted thin active laye r and a highly doped p-cladding layer. High-power operation, at over 1 00 mW, was achieved.