DOMINANT RECOMBINATION CENTER IN ELECTRON-IRRADIATED 3C SIC

Deep level defects and their role in carrier recombination processes i n electron-irradiated 3C SiC have been studied by photoluminescence (P L) and optically detected magnetic resonance (ODMR). An isotropic ODMR spectrum, with a g value of 2.0061+/-0.0002 and an effective electron spin S = 1/2, is observed in irradiated 3 C SiC films. From the spect ral dependence studies of the ODMR signal, the defect is shown to be a deep level center related to a radiation-induced pi. band with a zero -phonon line at 1.121 eV. Due to the competition between different car rier recombination channels, this ODMR spectrum can also be observed a s a decrease of any other pi, emissions from the sample, indicating it s dominant role in recombination processes. (C) 1996 American Institut e of Physics.