PROPERTIES OF ALN FILMS GROWN AT 350 K BY GAS-PHASE EXCIMER-LASER PHOTOLYSIS (VOL 78, PG 6000, 1995)

Authors
RADHAKRISHNAN G
Citation
G. Radhakrishnan, PROPERTIES OF ALN FILMS GROWN AT 350 K BY GAS-PHASE EXCIMER-LASER PHOTOLYSIS (VOL 78, PG 6000, 1995), Journal of applied physics, 79(7), 1996, pp. 3801-3801
Citations number
1
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
79
Issue
7
Year of publication
1996
Pages
3801 - 3801
Database
ISI
SICI code
0021-8979(1996)79:7<3801:POAFGA>2.0.ZU;2-4