STIMULATED ELECTRONIC-TRANSITION CONCEPT FOR AN ERASABLE OPTICAL MEMORY

A new concept for an erasable optical memory is demonstrated using sti mulated electronic transition (SET). Large bandgap semiconductors are suitable materials for the SET medium. We have investigated the proper ties of MgS:Eu, Sm and SrS:Eu, Sm as possible media for the SET proces s. Quantum storage is achieved in the form of charges in deep levels i n the medium and stimulated radiative recombination is used as the rea ding process. Unlike magneto-optic (M-O) and phase change (PC) process es, optical writing, reading and erasing are achieved without localize d heating. The SET process will have an inherently faster data transfe r rate and a higher storage density, and the medium will be more durab le than the M-O and PC media. A possible application of the SET proces s in neural networks is also discussed.