The realization of a lateral structured thin solar cell based on silic
on is introduced and advantages such as increased internal electric fi
elds, light diffraction into the bulk of tile absorber, and improved l
ight trapping are discussed. The key process for tile realization of s
uch a solar cell is the interference laser recrystallization of amorph
ous silicon which has been applied to produce stripe, grid, and dot ar
rays. The experimental set-up of the laser recrystallization is presen
ted, and a detailed description of electronic properties of laser recr
ystallized, boron doped silicon films is given.