SUBMICRON SILICON STRUCTURES FOR THIN-FILM SOLAR-CELLS

Citation
Ce. Nebel et al., SUBMICRON SILICON STRUCTURES FOR THIN-FILM SOLAR-CELLS, Physica status solidi. b, Basic research, 194(1), 1996, pp. 55-67
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
03701972
Volume
194
Issue
1
Year of publication
1996
Pages
55 - 67
Database
ISI
SICI code
0370-1972(1996)194:1<55:SSSFTS>2.0.ZU;2-H
Abstract
The realization of a lateral structured thin solar cell based on silic on is introduced and advantages such as increased internal electric fi elds, light diffraction into the bulk of tile absorber, and improved l ight trapping are discussed. The key process for tile realization of s uch a solar cell is the interference laser recrystallization of amorph ous silicon which has been applied to produce stripe, grid, and dot ar rays. The experimental set-up of the laser recrystallization is presen ted, and a detailed description of electronic properties of laser recr ystallized, boron doped silicon films is given.