Numerical simulations on silicon solar cells with heteroemitter layers
made from various wide-gap semiconductors are described and the depen
dence of the I-V curves on the band offsets is explained. The main adv
antage utilizing heteroemitters on silicon is the chance for an improv
ed response in the blue region of the solar spectrum which may achieve
an increase of the total photocurrent up to 10%. Experimental results
on test solar cells with mu c-Si, ZnO, and SIPOS heteroemitters are p
resented and compared with these predictions.