GROWTH OF BULK ZNSE CRYSTALS - RECENT DEVELOPMENTS

Starting with a historical review and a general comparison of growth m ethods, the paper deals with the seeded vapour growth of substrate-qua lity ZnSe crystals. Under optimized growth conditions, in contrast to the growth from the melt, in SPVT and SCVT (seeded physical and chemic al vapour transport) twin-free single crystals are prepared. The dislo cation density decreases down to approximate to 10(4) cm(-2) in growth direction away from the seed transition region. SPVT-grown crystals a re the better ones with respect to optical properties showing exciton luminescence and decreasing deep level emission. For the application i n homoepitaxy, the SCVT-grown crystals with lowest defect densities se em to be superior.