GROWTH AND CHARACTERIZATION OF SIC FILMS DEPOSITED ON A-SIO2 SI(100) SUBSTRATES/

The growth of polycrystalline SiC films has been carried out by low pr essure chemical vapour deposition in a horizontal quartz reaction cham ber using tetramethylsilane and H-2 as the precursor gas mixture. Sili con (100) wafers were used as substrates. A thin SiO2 amorphous layer of similar to 6 nm was formed before SiC deposition to reduce the stra in induced by the 8% difference in thermal expansion coefficients betw een SiC and Si. Samples were analysed by X-ray diffraction, scanning e lectron microscopy, transmission electron microscopy, and infrared ref lectivity. The structure of films grown at temperatures between 950 an d 1150 degrees C varies from amorphous to polycrystalline SiC. Prefere ntial [111] orientation and columnar growth of polycrystalline films d evelops with increasing temperature.