OBSERVATION OF ORGANIC THIN-FILM SURFACE BY ATOMIC-FORCE MICROSCOPY

Authors
WANG GM DING DS LU ZH YU W DING Y
Citation
Gm. Wang et al., OBSERVATION OF ORGANIC THIN-FILM SURFACE BY ATOMIC-FORCE MICROSCOPY, Gaodeng xuexiao huaxue xuebao, 16(11), 1995, pp. 112-115
Citations number
8
Categorie Soggetti
Chemistry
Journal title
Gaodeng xuexiao huaxue xuebao → ACNP
ISSN journal
02510790
Volume
16
Issue
11
Year of publication
1995
Supplement
S
Pages
112 - 115
Database
ISI
SICI code
0251-0790(1995)16:11<112:OOOTSB>2.0.ZU;2-9
Abstract
The 8-hydroxyquinoline neodymium (Ndq3) organic thin films deposited o n the cleaned indium/tin oxide (ITO) at different deposition rates wit h the same vacuity (133.3X10(-5) Pa) were revealed by atomic force mic roscopy (AFM). Organic devices with one layer of Ndq3 as the e-type co nductive material at different deposition rates sandwiched between ITO and aluminum electrodes have been fabricated, respectively. Evidence suggests that the current-voltage (I-V) characteristics were determine d by the uniformity of organic film which was controlled by the deposi tion conditions.