The 8-hydroxyquinoline neodymium (Ndq3) organic thin films deposited o
n the cleaned indium/tin oxide (ITO) at different deposition rates wit
h the same vacuity (133.3X10(-5) Pa) were revealed by atomic force mic
roscopy (AFM). Organic devices with one layer of Ndq3 as the e-type co
nductive material at different deposition rates sandwiched between ITO
and aluminum electrodes have been fabricated, respectively. Evidence
suggests that the current-voltage (I-V) characteristics were determine
d by the uniformity of organic film which was controlled by the deposi
tion conditions.