INVESTIGATION OF THE ELECTRICAL AND THE DIELECTRIC-PROPERTIES OF VARIOUS LB FILMS

The electrical and dielectric properties of metal-insulator-semiconduc tor(MIS) and metal-insulator-metal(MIM) structures of various LB films were investigated. High frequency capacitance-voltage(C-V) measuremen ts of the MIS structures of the LB films showed the accumulation, depl etion and inversion regions. The dielectric constants of various LB fi lms were calculated. Contrast with other LB films, the microgel star-s haped amphiphile(MSA) LB film showed a potential application in electr onic devices due to its higher thermal and mechanical stabilities. The breakdown voltage of the MIM structure of the MSA containing only a s ingle monolayer is over 200 V.