PULSED-LASER DEPOSITION OF THIN INXGA1-XA S FILMS

Authors
BURIMOV VN ZHERIKHIN AN POPKOV VL
Citation
Vn. Burimov et al., PULSED-LASER DEPOSITION OF THIN INXGA1-XA S FILMS, Kvantovaa elektronika, 23(1), 1996, pp. 73-75
Citations number
6
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Kvantovaa elektronika → ACNP
ISSN journal
03687147
Volume
23
Issue
1
Year of publication
1996
Pages
73 - 75
Database
ISI
SICI code
0368-7147(1996)23:1<73:PDOTIS>2.0.ZU;2-9
Abstract
An investigation was made of the distribution of the velocities of the droplets and of the atomic component in a plasma plume formed during laser ablation of InAs and GaAs semiconductor targets. The velocity of atoms was at least 6 times greater than the velocity of droplets. A m echanical velocity filter for the removal of droplets from the plasma plume was constructed. The use of a composite target made it possible to grow epitaxial InxGa1-xAs films of different compositions.