AMORPHIZATION OF THIN SI LAYERS BY ARSENIC ION-IMPLANTATION

Annealing of an amorphized Si layer formed by As+ implantation into an SOI (silicon-on-insulator) Si layer was performed. Arsenic ions are i mplanted at 100 keV and 5.0 x 10(15) ions/cm(2) into thin (56 nm thick ) and thick (1.5 mu m thick) Si layers. Rutherford backscattering spec trometry and transmission electron microscope measurements show the fo rmation of a 130 nm thick amorphous layer by this implantation. In the thick Si layer, recrystallization occurred at the amorphous/crystalli ne interface with an annealing at 850 degrees C. However, no recrystal lization occurred within the thin Si layer because a crystalline inter face did not exist. Thus, a high resistivity, amorphous n-Si layer wit h low electron mobility was formed.