SHALLOW ANGLE X-RAY-DIFFRACTION FROM AS-DEPOSITED DIAMOND THIN-FILMS

Citation
Js. Rigden et al., SHALLOW ANGLE X-RAY-DIFFRACTION FROM AS-DEPOSITED DIAMOND THIN-FILMS, Journal of the Electrochemical Society, 143(3), 1996, pp. 1033-1037
Citations number
12
Categorie Soggetti
Electrochemistry
ISSN journal
00134651
Volume
143
Issue
3
Year of publication
1996
Pages
1033 - 1037
Database
ISI
SICI code
0013-4651(1996)143:3<1033:SAXFAD>2.0.ZU;2-X
Abstract
We demonstrate the method of diffraction at shallow angles of incidenc e, using the intrinsically highly collimated x-ray beam generated by a synchrotron source, through the study of diamond thin films in their as-deposited (i.e., on substrate) state. As the incident angle is decr eased, scattering from the diamond film can be isolated as contributio ns from the substrate are reduced. Diamond films deposited onto both s ilicon and steel substrates have been examined, evidence of an interfa cial region between the film and silicon wafer has been observed, and conventional transmission x-ray diffraction has been used as a complem ent to the shallow angle results from the films deposited on steel.