Js. Rigden et al., SHALLOW ANGLE X-RAY-DIFFRACTION FROM AS-DEPOSITED DIAMOND THIN-FILMS, Journal of the Electrochemical Society, 143(3), 1996, pp. 1033-1037
We demonstrate the method of diffraction at shallow angles of incidenc
e, using the intrinsically highly collimated x-ray beam generated by a
synchrotron source, through the study of diamond thin films in their
as-deposited (i.e., on substrate) state. As the incident angle is decr
eased, scattering from the diamond film can be isolated as contributio
ns from the substrate are reduced. Diamond films deposited onto both s
ilicon and steel substrates have been examined, evidence of an interfa
cial region between the film and silicon wafer has been observed, and
conventional transmission x-ray diffraction has been used as a complem
ent to the shallow angle results from the films deposited on steel.