The properties of Si-chemical vapor deposited (CVD) diamond interface
were investigated by a measuring of CVD diamond films charging under i
llumination (in a photon energy region from 1.0 to 5.8 eV) as a result
of photoexcited electrons and holes injection from silicon substrate
and their trapping in a diamond layer. The photocharging was estimated
from a change in the dark values of the contact potential difference
which was obtained by a dynamic capacitor (Kelvin) method. Three chara
cteristic energy thresholds for electron and hole photoinjection were
obtained: 2.8, 3.8, and 5.4 eV. The band model of silicon-diamond inte
rface was proposed on the basis of the experimental data.